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Advanced materials: oxygen vacancy defects help BiVO4 photoanode to efficiently photolysis water

which convert solar energy into clean energy are regarded as the important means to solve the energy crisis environmental pollution of human society. However due to the lack of excellent photoanode photocathode materials with good energy b matching the solar hydrogen conversion efficiency of Photoelectrochemical water splitting for hydrogen production is low which is still in the laboratory research stage. In the process of Photoelectrochemical decomposition of water for hydrogen production the oxygen evolution reaction of photoanode is a complex photoelectrochemical process involving four electron transfer which is extremely slow in kinetics which is the key to restrict the solar hydrogen conversion efficiency of Photoelectrochemical water splitting for hydrogen production. Therefore the research development of new high-efficiency photoanode is of great significance to improve the solar hydrogen conversion efficiency of Photoelectrochemical decomposition of water for hydrogen production. BiVO4 is an ideal photoanode material with suitable b gap energy b position aqueous solution stability. However due to the low carrier mobility short hole diffusion distance of BiVO4 it is difficult to obtain high photocurrent density due to the serious electron hole recombination loss in bulk phase.

Professor Wang songcan Huang Wei academician team of Northwestern Polytechnic University Professor Wang Lianzhou University of Queensl jointly developed a new sulfur oxidation method to convert Bi2S3 precursor film into BiVO4 film form oxygen vacancy defects in the whole BiVO4 film. The results show that oxygen vacancy defects can increase the majority carrier concentration photovoltage of BiVO4 significantly improve the electron hole separation rate of BiVO4 bulk phase. The photocurrent density of 5.54 Ma cm – 2 was obtained under 1.23 vrhe AM 1.5 g simulated sunlight irradiation the stability was over 80 H. It is worth noting that the photocurrent density of 6.24 Ma cm – 2 can be obtained by stacking two BiVO4 / nifeox photoanodes the photoelectric conversion efficiency is as high as 2.76%. Relevant research results provide a new idea for the design of high-efficiency photoanodes which is published online in advanced materials (DOI: 10.1002 / ADMA. 202001385) briefly introduced in frontispiece.


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