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Advanced materials: effects of different stacking on optical and ultrafast carrier relaxation processes of rhenium disulfide

wallpapers Business 2020-09-15 >

for two-dimensional materials stacking the atomic layers in different ways sometimes the physical chemical properties of the materials will change greatly. Taking three-layer graphene as an example the dielectric constant phonon vibration electron conduction of ABC ABA are obviously different. However there is a lack of research on transition metal chalcogenides. Rhenium disulfide is a new two-dimensional material with anisotropic physical properties. Unlike black phosphorus rhenium disulfide is also very stable in air.

two different stacking patterns of rhenium disulfide were characterized by transmission electron microscopy. These two stacking methods are very stable no stacking transformation is observed even at about 300 ℃. For these two different stacks the corresponding Raman fluorescence spectra are obviously different. The first principle calculation shows that the two kinds of stacking exactly correspond to the two lowest points of the system energy. At the same time they calculated the Raman spectra based on these two structures the results are in good agreement with the experimental data. In order to further underst the energy b differences of different stacks they measured the exciton relaxation process using femtosecond laser pumping detection technology. For the polarization perpendicular to the b-axis (along the direction of re re chain) AA stack exhibits excited state absorption while AB stack exhibits saturated absorption. The researchers believe that this research will open a door to stack based physical properties research provide new ideas directions for the development of new polarization dependent optoelectronic devices.


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