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Gallium nitride power materials market prospect analysis

wallpapers Business 2020-04-10 >
Given the rise in global environmental awareness, two power conversion materials, silicon carbide (SiC) and gallium nitride (GaN), have attracted much attention. Among them, silicon carbide has early development advantages, and its power modules have emerged in the field of renewable energy and automotive electronics. Gallium nitride, which mainly targets the low-power market, will slowly march into the mid-power market.
Renewable energy equipment that can make up for the shortage of natural energy has created an excellent demand for silicon carbide that focuses on mid-power and high-power applications. On the other hand, the test results of the recent introduction of silicon carbide (SiC) components in electric vehicles by Toyota have also been released. Its effect in improving energy efficiency and reducing the size of the power control system (PCU) is significantly better than that of silicon. 
Zhang Yuming, chief technology officer and general manager of Delta, said that there were not many power electronics manufacturers in the past. Still, with the recent increase in semiconductor components of silicon carbide and gallium nitride, this part of the market is worth looking forward to it. Also, in terms of power equipment, traditional thermal power generation and nuclear power generation use fewer power electronics, but emerging renewable energy is different. Power converters in wind power generation play a vital role, while solar power photovoltaics Inverter (PV Inverter), the proportion is also hefty.
Speaking of the current market situation of silicon carbide wafers, Feng Gan, general manager of Epiworld, said that the most widely used today is 4-inch wafers, and the market demand for 6 inches is also increasing. Still, from 4 inches to 6 inches. The change is not as fast as expected. Although the price cost of 6-inch is more advantageous, the main problem is that the quality of the epitaxial material of 6-inch silicon carbide cannot reach a certain level. He believes that within 2 to 3 years, 4-inch business opportunities are still expected. In addition to the attention of silicon carbide devices, gallium nitride (GaN) devices, which have the advantages of medium and low power applications, are also keeping up.
Pierric GUEGUEN, manager of Yole Developpement's power electronics and compound semiconductor business unit, said that due to the high demand for thermal management and junction temperature technology innovation, power electronics has indeed become an emerging field of innovative materials applications, of which silicon carbide and gallium nitride are thoroughly Change the overall supply chain and packaging structure.
Charles Bailey, senior marketing director of GaN Systems Asia, said that in terms of electrical properties and physical properties, both GaN and SiC adopt wide-bandgap technology, and the thermal conductivity of SiC is 3.5W / mK higher than GaN 1.5W / mK, so it is more suitable for high power applications.
Charles Bailey pointed out, however, in the mobility of two-dimensional electron gas (Two Dimensional Electron Gas, 2DEG), gallium nitride (1800μ) is significantly better than silicon carbide (125μ), which is also the gallium nitride can achieve high efficiency and high The reason for power density.

Trunnano is one of the world's largest manufacturers of gallium nitride."We have been supplying gallium nitride hexaboride, ensuring product quality, and guaranteeing stable supply prices," said Rachel, sales manager at Luoyang Trunnano.Please contact Rachel if you are interested in gallium nitride.
Email: rachel@ihpa.net

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