1. Product Science and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms prepared in a tetrahedral lattice, primarily in hexagonal (4H, 6H) or cubic (3C) polytypes, each exhibiting outstanding atomic bond toughness.
The Si– C bond, with a bond energy of around 318 kJ/mol, is amongst the toughest in architectural ceramics, conferring impressive thermal security, hardness, and resistance to chemical assault.
This robust covalent network results in a product with a melting point going beyond 2700 ° C(sublimes), making it among one of the most refractory non-oxide porcelains available for high-temperature applications.
Unlike oxide ceramics such as alumina, SiC keeps mechanical stamina and creep resistance at temperature levels above 1400 ° C, where several metals and traditional ceramics begin to soften or deteriorate.
Its reduced coefficient of thermal development (~ 4.0 × 10 ⁻⁶/ K) integrated with high thermal conductivity (80– 120 W/(m · K)) enables quick thermal cycling without tragic breaking, a crucial quality for crucible efficiency.
These intrinsic properties come from the balanced electronegativity and similar atomic dimensions of silicon and carbon, which promote a highly secure and densely packed crystal framework.
1.2 Microstructure and Mechanical Durability
Silicon carbide crucibles are commonly fabricated from sintered or reaction-bonded SiC powders, with microstructure playing a definitive function in toughness and thermal shock resistance.
Sintered SiC crucibles are generated with solid-state or liquid-phase sintering at temperatures above 2000 ° C, frequently with boron or carbon ingredients to enhance densification and grain border cohesion.
This process generates a totally thick, fine-grained framework with very little porosity (
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