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Silicon Carbide Ceramic Plates: High-Temperature Structural Materials with Exceptional Thermal, Mechanical, and Environmental Stability aln ceramic

Sep 23,2025

1. Crystallography and Material Principles of Silicon Carbide

1.1 Polymorphism and Atomic Bonding in SiC


(Silicon Carbide Ceramic Plates)

Silicon carbide (SiC) is a covalent ceramic compound made up of silicon and carbon atoms in a 1:1 stoichiometric ratio, identified by its remarkable polymorphism– over 250 recognized polytypes– all sharing strong directional covalent bonds yet differing in stacking sequences of Si-C bilayers.

The most technologically pertinent polytypes are 3C-SiC (cubic zinc blende framework), and the hexagonal forms 4H-SiC and 6H-SiC, each exhibiting subtle variations in bandgap, electron flexibility, and thermal conductivity that influence their viability for certain applications.

The toughness of the Si– C bond, with a bond power of roughly 318 kJ/mol, underpins SiC’s remarkable solidity (Mohs hardness of 9– 9.5), high melting factor (~ 2700 ° C), and resistance to chemical deterioration and thermal shock.

In ceramic plates, the polytype is generally chosen based on the meant use: 6H-SiC prevails in structural applications because of its simplicity of synthesis, while 4H-SiC controls in high-power electronic devices for its superior fee service provider mobility.

The large bandgap (2.9– 3.3 eV relying on polytype) additionally makes SiC an excellent electric insulator in its pure type, though it can be doped to function as a semiconductor in specialized digital gadgets.

1.2 Microstructure and Phase Pureness in Ceramic Plates

The efficiency of silicon carbide ceramic plates is critically depending on microstructural functions such as grain size, density, phase homogeneity, and the presence of second phases or contaminations.

Top quality plates are typically made from submicron or nanoscale SiC powders through innovative sintering techniques, causing fine-grained, totally thick microstructures that maximize mechanical toughness and thermal conductivity.

Contaminations such as cost-free carbon, silica (SiO TWO), or sintering help like boron or aluminum have to be thoroughly managed, as they can develop intergranular movies that lower high-temperature strength and oxidation resistance.

Residual porosity, also at reduced degrees (

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